Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

260W Tc

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Turn Off Delay Time  

61 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2002

Series  

HEXFET®

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

15Ohm

Voltage - Rated DC  

100V

Current Rating  

80A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

260W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

15m Ω @ 45A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3830pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Rise Time  

130ns

Vgs (Max)  

±20V

Fall Time (Typ)  

120 ns

Continuous Drain Current (ID)  

80A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

75A

Drain to Source Breakdown Voltage  

100V

Dual Supply Voltage  

100V

Recovery Time  

150 ns

Nominal Vgs  

4 V

Height  

8.763mm

Length  

10.5156mm

Width  

4.69mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free